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Method and System for Spin Injection, Spin Diffusion and Spin Manipulation of Ferromagnetic Contacts in CMOS based Architecture

IP.com Disclosure Number: IPCOM000208078D
Publication Date: 2011-Jun-22
Document File: 4 page(s) / 54K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method and system for providing a Graphene (Gr) channel for spin injection, spin diffusion, and spin manipulation of ferromagnetic contacts is disclosed. An exchange field is provided in the spin injection part to create spin precession and spin current. The spin precession is used for controlling electric field.

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Method and System for Spin Injection , Spin Diffusion and Spin Manipulation of Ferromagnetic Contacts in CMOS based Architecture

Disclosed is a method and system for providing a Graphene (Gr) channel for spin injection, spin diffusion, and spin manipulation of ferromagnetic (FM) contacts in CMOS based architecture.

The method and system disclosed herein includes a terminal for spin injection (emitter "E"), a terminal for spin detection (drain "D"), and a gate terminal. The spin injection, the spin detection terminal, and the gate terminal are illustrated in Fig. 1.

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Figure 1

The spin injection terminal and the spin detection terminal are based on ferromagnetic contact directly on the Graphene (Gr) channel as illustrated in Fig. 1. Alternatively, the spin injection terminal and the spin detection terminal may be based on a combination of ferromagnetic contact, tunnel barrier, and the Gr channel. Further, the gate terminal includes a ferromagnet which is in direct contact with the Gr channel. The ferromagnet induces an exchange splitting of energy levels in the Gr channel via a direct exchange causing an induction of an exchange field "He". This exchange field "He"induces a torque and spin precession in the Gr channel whenever both spins of carriers injected via emitter "E" and the exchange field "He" are not collinear. In order to control direction of the exchange field "He" electrically, voltage may be applied to gate "G" placed on top of a non magnetic electrode, as shown in Fig. 2. Hence, by changing the direction of the exchange field "He"from a direction set by magnetization of drain "D" to a direction perpendicular to drain "D", the spin precession in the Gr channel may be turned on or

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Figure 2

Referring to Fig. 2, the change in direction of the exchange field "He" is associated with a change in spin direction of the current at the electrode associated with a drop in current polarization due to non-coherent precession. Such...