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A CLEANING FOR THIN FILM DEPOSTION CHAMBER IN PV

IP.com Disclosure Number: IPCOM000216788D
Publication Date: 2012-Apr-19
Document File: 1 page(s) / 62K

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A CLEANING FOR THIN FILM DEPOSITION CHAMBER IN PV

Problem Solved by the Invention

The invention improves on cleaning unwanted ZnO materials left in the PV chamber surface w/o plasma device.  It leads to step into the next deposition process w/o any interruption. 

Solution of the Problem According to the Invention

Zinc oxide can be removed by admixture in the dry process even at low temperature in the chamber.  High speed cleaning and improving uniformity after cleaning are achievable. 

Detailed Description of Various Embodiments of the Invention

An admixture used for removing ZnO consists of Cl2 and trace amount of NO called additive.  ZnO cleaning is not occurred with Cl2 only at 200oC even Cl2 concentration increased.  On the contrary cleaning with high etching rate (100A/min) can be achieved by means of Cl2 in combination with trace amount of NO addition (for instance 50%Cl2+10%NO in dilution with N2).  Moreover increase of operational temperature to 300oC contributes to boost etching rate (400A/min) remarkably.  We identified by FTIR that NOCl (Nitrosyl Chloride) is existent in the exhaust thus it may behave an active species in the cleaning process. 

1.         A method of cleaning ZnO from the surface of a deposition chamber, as substantially described herein.

2.         An apparatus for cleaning a deposition chamber, as substantially described herein.


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