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Deposition of HfO film by TEMAHf with Improved Non-Uniformity as Seeding Layer

IP.com Disclosure Number: IPCOM000219007D
Publication Date: 2012-Jun-15
Document File: 2 page(s) / 26K

Publishing Venue

The IP.com Prior Art Database

Abstract

The process of HfO deposition has been well developed by HfCI4 and H2O, however, when it grew on HF dipped Si wafer, a high UN% is expected. In order to solve this problem, multiple efforts have been investigated including oxidation of Si surface to form a thin layer of SiO2 by either ozone or oxygen plasma. The layer of SiO2 can provide a good seeding layer for HfO growth. Another way is to produce a thin layer of HfO by TEMAHf as seeding layer for the subsequent HfO growth by HfCI4. The NU% of HfO by HfCI4 is directly related to the NU% of HfO seeding layer. This invention is proposed to deposit HfO seeding layer by TEMAHf with low values of NU%.

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Deposition of HfO film by TEMAHf with improved non-uniformity as seeding layer

The process of HfO deposition has been well developed by HfCI4 and H2O, however, when it grew on HF dipped Si wafer, a high UN% is expected.  In order to solve this problem, multiple efforts have been investigated including oxidation of Si surface to form a thin layer of SiO2 by either ozone or oxygen plasma.  The layer of SiO2 can provide a good seeding layer for HfO growth.  Another way is to produce a thin layer of HfO by TEMAHf as seeding layer for the subsequent HfO growth by HfCI4.  The NU% of HfO by HfCI4 is directly related to the NU% of HfO seeding layer.  This invention is proposed to deposit HfO seeding layer by TEMAHf with low values of NU%.

The existing possible solutions to make low NU% of HfO by TEMAHf (HLS) and H2O (LPV):

1.       By indexing.  However, in this particular case, wafer map shows center thinner and outer thicker.  Indexing cannot effectively make NU% lower.

2. By N2 flow rate.  Film growth along the flow direction becomes uniform, but at the two sides of the flow direction, film grows very fast and NU% larger.

3. Other adjustments like TEMAHf pulse time, H2O dose time, chamber temperature and chamber pressure, HLS needle valve setting and vessel temperature cannot impact significantly the deposited HfO wafer map patterns (always shows center thinner and outer thicker), so have less effects of the resulting values of NU%.

As have been mentioned above, the wafer map p...