Browse Prior Art Database

CPMF-1200-S160B Z-FET Silicon Carbide MOSFET

IP.com Disclosure Number: IPCOM000220884D
Publication Date: 2012-Aug-13

Publishing Venue

The IP.com Prior Art Database

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Page 01 of 10

CPMF-1200-S160B


Z-FeTTM Silicon Carbide MOSFET

N-Channel Enhancement Mode Bare Die

VDS = 1200 V

RDS(on) = 160 mΩ

Qg = 47 nC

Features

Package


• Industry Leading RDS(on)


• High Speed Switching


• Low Capacitances


• Easy to Parallel


• Simple to Drive

Benefits

D

D

G

G

S

S


• Higher System Efficiency


• Reduced Cooling Requirements


• Avalanche Ruggedness


• Increase System Switching Frequency

Applications

DIE

Part Number

Package

CPMF-1200-S160B DIE


• Solar Inverters


• Motor Drives


• Military and Aerospace

Maximum Ratings

Symbol

Parameter

Value

Unit

Test Conditions

Note

VGS@20V, TC = 25˚C 1

ID Continuous Drain Current


26.1

A


14.7 VGS@20V, TC = 100˚C

IDpulse

Pulsed Drain Current

56

A

Pulse width tP limited by Tjmax TC = 25˚C, tp = 1ms

1

EAS

Single Pulse Avalanche Energy


1.1

J

ID = 10A, VDD = 50 V, L = 9.5 mH

EAR

Repetitive Avalanche Energy

400

mJ

tAR limited by Tjmax

IAR

Repetitive Avalanche Current

10

A

ID = 10A, VDD = 50 V, L = 3 mH tAR limited by Tjmax

VGS Gate Source Voltage -5/+25 V

Ptot Power Dissipation

177.4 W TC=25˚C

1

TJ , Tstg Operating Junction and Storage Temperature -55 to

+135 ˚C

TL Solder Temperature

260 ˚C 1.6mm (0.063") from case for 10s

Note:


1. Assumes a thermal resistance junction to case of ≤ 0.62 °C/W.

1 CPMF-1200-S160B Rev. -


Page 02 of 10

Electrical Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Unit

Test Conditions

Note

V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0V, ID = 100μA

VGS(th)

Gate Threshold Voltage


2.1 2.5 4 V VDS = VGS, ID = 1mA, TJ = 25ºC 2


1.8

VDS = VGS, ID = 1mA, TJ = 135ºC

IDSS

Zero Gate Voltage Drain Current


0.5 50 μA V DS = 1200V, VGS = 0V, TJ = 25ºC 5 125 VDS = 1200V, VGS = 0V, TJ = 135ºC

IGSS Gate-Source Leakage Current

250 nA VGS = 20V, VDS = 0V

RDS(on)

Drain-Source On-State Resistance

160 220 mV GS = 20V, ID = 10A, TJ = 25ºC 190 260 VGS = 20V, ID = 10A, TJ = 135ºC


3.7

gfs

Transconductance

S V DS= 20V, IDS= 10A, TJ = 25ºC fig. 3


3.4

VDS= 20V, IDS= 10A, TJ = 135ºC

VGS = 0V VDS = 800V f = 1MHz

VAC = 25mV

Ciss Input Capacitance

928

Coss Output Capacitance

63

pF

fig. 5

Crss

Reverse Transfer Capacitance


7.45

td(on)i Turn-On Delay Time

7

VDD = 800V VGS = -2/20V ID = 10A
RG = 6.8Ω

L = 856μH
Per JEDEC24 Page 27 fig. 11

tr Rise Time

14

ns

td(off)i Turn-Off Delay Time

46

tfi Fall Time

37

EON Turn-On Switching Loss 261

μJ

EOff Turn-Off Switching Loss 120

μJ

RG Internal Gate Resistance


13.6

                                                              Ω VGS = 0V, f = 1MHz, VAC = 25mV Note: 2. The recommended on-state VGS is +20V and the recommended off-state VGS is between -2V and -5V

Reverse Diode Characteristics

Symbol Parameter

Typ. Max. Unit Test Conditions Note

GS = -5V, IF=5A, TJ = 25ºC


3.1

Vsd Diode Forward Voltage


3.5

V V

VGS = -2V, IF=5A, TJ = 25ºC

trr Reverse Recovery Time 138

Qrr Reverse Recovery Charge 94

nC

ns VGS = -5V, IF=10A, TJ = 25ºC

VR = 800V, diF/dt= 100A/μs fig. 12,13

Irrm Peak Reverse Recovery Current


1.57

A

Gate Charge Characteristics

Symbol Parameter

Typ. Max. Unit Test Conditio...