Browse Prior Art Database

CMF10120D-Silicon Carbide Power MOSFET

IP.com Disclosure Number: IPCOM000220940D
Publication Date: 2012-Aug-15

Publishing Venue

The IP.com Prior Art Database

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Page 01 of 10

CMF10120D-Silicon Carbide Power MOSFET

Z-FETTM MOSFET

N-Channel Enhancement Mode

Features

VDS = 1200 V

RDS(on) = 160 mΩ

Qg = 47 nC

Package

D

D S


• Industry Leading RDS(on)


• High Speed Switching


• Low Capacitances


• Easy to Parallel


• Simple to Drive


• Pb-Free Plating, RoHS Compliant, Halogen Free

Benefits

G

G

TO-247-3

S


• Higher System Efficiency


• Reduced Cooling Requirements


• Avalanche Ruggedness


• Increased System Switching Frequency

Applications

Part Number

Package

CMF10120D TO-247-3


• Solar Inverters


• High Voltage DC/DC Converters


• Motor Drives

Maximum Ratings

Symbol

Parameter

Value

Unit

Test Conditions

Note

VGS@20V, TC = 25˚C 12

ID Continuous Drain Current 24

A

VGS@20V, TC = 100˚C

IDpulse

Pulsed Drain Current

49

A

Pulse width tP limited by Tjmax TC = 25˚C

EAS

Single Pulse Avalanche Energy

500

mJ

ID = 10A, VDD = 50 V, L = 9.5 mH

EAR

Repetitive Avalanche Energy

400

mJ

tAR limited by Tjmax

IAR

Repetitive Avalanche Current

10

A

ID = 10A, VDD = 50 V, L = 3 mH tAR limited by Tjmax

VGS Gate Source Voltage -5/+25 V

Ptot Power Dissipation

152 W TC=25˚C

TJ , Tstg Operating Junction and Storage Temperature -55 to

+125 ˚C

TL Solder Temperature

260 ˚C 1.6mm (0.063") from case for 10s

Md Mounting Torque

1


8.8

 Nm
lbf-in M3 or 6-32 screw

1 CMF10120D Rev. -


Page 02 of 10

Electrical Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Unit

Test Conditions

Note

V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = -5V, ID = 50μA

VGS(th) Gate Threshold Voltage


2.5 4 V

VDS = VGS, ID = 500uA, TJ = 25ºC 1


1.8

VDS = VGS, ID = 500uA, TJ = 125ºC

IDSS Zero Gate Voltage Drain Current


0.5 50 μA V DS = 1200V, VGS = 0V, TJ = 25ºC 5 125 VDS = 1200V, VGS = 0V, TJ = 125ºC

IGSS Gate-Source Leakage Current

250 nA VGS = 20V, VDS = 0V

RDS(on) Drain-Source On-State Resistance 160 220 mV GS = 20V, ID = 10A, TJ = 25ºC fig. 4 190 260 VGS = 20V, ID = 10A, TJ = 125ºC


3.7

gfs Transconductance

S V DS= 20V, IDS= 10A, TJ = 25ºC fig. 3


3.4

VDS= 20V, IDS= 10A, TJ = 125ºC

Ciss Input Capacitance

928

VGS = 0V VDS = 800V f = 1MHz

VAC = 25mV

Coss Output Capacitance

63

pF

fig. 5

Crss

Reverse Transfer Capacitance


7.45

td(on)i Turn-On Delay Time

7

tr Rise Time

14

VDD = 800V VGS = -2/20V ID = 10A
RG = 6.8Ω

L = 856μH
Per JEDEC24 Page 27 fig. 12

ns

td(off)i Turn-Off Delay Time

46

tfi Fall Time

37

EON Turn-On Switching Loss 261

μJ

EOff Turn-Off Switching Loss 120

μJ

RG Internal Gate Resistance


13.6


Ω VGS = 0V, f = 1MHz, VAC = 25mV

NOTES: 1. The recommended on-state VGS is +20V and the recommended off-state VGS is between -2V and -5V

Reverse Diode Characteristics

Symbol Parameter Typ. Max. Unit Test Conditions

Note

V V

GS = -5V, IF=5A, TJ = 25ºC


3.1

Vsd Diode Forward Voltage


3.5

VGS = -2V, IF=5A, TJ = 25ºC

trr Reverse Recovery Time 138

Qrr Reverse Recovery Charge 94

nC

ns VGS = -5V, IF=10A, TJ = 25ºC
VR = 800V, diF/dt= 100A/μs fig. 13,14

Irrm Peak Reverse Recovery Current


1.57

A

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Unit

...