Browse Prior Art Database

C3D02060–Silicon Carbide Schottky Diode

IP.com Disclosure Number: IPCOM000220946D
Publication Date: 2012-Aug-15
Document File: 6 page(s) / 873K

Publishing Venue

The IP.com Prior Art Database

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 41% of the total text.

Page 01 of 6

C3D02060-Silicon Carbide Schottky Diode

ZERO RECOVERY® RECTIFIER

VRRM = 600 V IF(AVG) = 2 A

Qc = 4.8 nC

Features

Package


600-Volt Schottky Rectifier


Optimized for PFC Boost Diode Application


Zero Reverse Recovery Current


Zero Forward Recovery Voltage


High-Frequency Operation


Temperature-Independent Switching Behavior


Extremely Fast Switching


Positive Temperature Coefficient on VF

Benefits

TO-252-2 TO-220-2

PIN 1

PIN 2


Replace Bipolar with Unipolar Rectifiers


Essentially No Switching Losses


Higher Efficiency


Reduction of Heat Sink Requirements


Parallel Devices Without Thermal Runaway

Applications

CASE

Part Number

Package

Marking


Switch Mode Power Supplies


Power Factor Correction

- Typical PFC Pout : 300W-450W

C3D02060A TO-220-2 C3D02060

C3D02060E TO-252-2 C3D02060

PRELIMINARY

Maximum Ratings

Symbol

Parameter

Value

Unit

Test Conditions

Note

VRRM Repetitive Peak Reverse Voltage

600 V

VRSM Surge Peak Reverse Voltage

600 V

VDC DC Blocking Voltage

600 V

IF(AVG) Average Forward Current


2.0 A TC=150˚C

TC=25˚C, tP=10 mS, Half Sine Wave D=0.3 TC=110˚C, tP=10 mS, Half Sine Wave D=0.3

IFSM Non-Repetitive Peak Forward Surge Current 19 A TC=110˚C, tP=10 mS, Half Sine Wave D=0.3

IFSM Non-Repetitive Peak Forward Surge Current 22 A TC=25˚C, tP=10 µS, Pulse


Ptot

IFRM

Repetitive Peak Forward Surge Current


12.0


9.0

A

D02060Rev.-

Power Dissipation

TBD TBD

W

TC=25˚C TC=110˚C

Datasheet:C3

TJ , Tstg Operating Junction and Storage Temperature -55 to

+175 ˚C

TO-220 Mounting Torque

1


8.8

 Nm lbf-in

M3 Screw 6-32 Screw

Subject to change without notice. www.cree.com

1



Page 02 of 6

Electrical Characteristics

Symbol

Parameter

Typ.

Max.

Unit

Test Conditions

Note

VF Forward Voltage


1.7


2.4 V

IF = 2 A TJ=25°C IF = 2 A TJ=175°C

IR Reverse Current

10

20

50
100 μA

VR = 600 V TJ=25°C VR = 600 V TJ=175°C

QC

Total Capacitive Charge


4.8

nC

VR = 600 V, IF = 2A di/dt = 500 A/μS
TJ = 25°C

PRELIMINARY

C

Total Capacitance

114 9 8

pF

VR = 0 V, TJ = 25°C, f = 1 MHz VR = 200 V, TJ = 25˚C, f = 1 MHz

VR = 400 V, TJ = 25˚C, f = 1 MHz

Note:


1. This is a majority carrier diode, so there is no reverse recovery charge.

Thermal Characteristics

Typ. Unit

RθJC TO-220 Package Thermal Resistance from Junction to Case TBD °C/W

Symbol

Parameter

RθJC TO-252 Package Thermal Resistance from Junction to Case TBD °C/W

Typical Performance


4.0


1.0E-05

10


4.0


3.5


3.0


2.5


2.0


1.5


1.0


0.5


3.5

T

=

25°C

J

T

=

75°C

J

T

=

125°C

J

T

=

175°C

J


8.0E-06

8


3.0


2.5

I FForward Current (A)

Forward Current

Reverse Current (A)

I RReverse Current (μA)


6.0E-06

6


2.0

Current 25C

Current 25C


1.5

Current 75C

Current 125C

Current 175C


4.0E-06

4

Current 75C Current 125C Current 175C

T

=

25°C

J

T

=

75°C

J

T

=

125°C

J

T

=

175°

J


1.0


2.0E-06

2


0.5


0.0


0.0E+00

0 0.0 0.5 1.0 1.5 2.0 2.5 3.0

0 0 100 200 300 400 500 600 700 800


0.0 0.5 1.0 1.5 2.0 2.5 3.0

Forward Voltage

VF Forward Voltage (V)

0 100 200 300 400 500 600 700 800 Reverse Bias...