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Three-Step Ozone Based Atomic Layer Deposition Process for Surface Loss Metal Oxide

IP.com Disclosure Number: IPCOM000222193D
Publication Date: 2012-Sep-24
Document File: 1 page(s) / 28K

Publishing Venue

The IP.com Prior Art Database

Abstract

We propose a three-step ozone based ALD process: Metal precursor – O3 – NxOy, to passivate the metal oxide surface at the end of the cycle and minimize the parasitic surface loss (destruction) of O3 dose. Compared with the conventional ozone based ALD, an additional pulse of NxOy is employed to passivate the metal oxide surface. By passivating the surface, the required O3 dose will be reduced and the non-uniformity of film will be improved.

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Three-step ozone based atomic layer deposition process for surface loss metal oxide

What problem does the invention solve?

Many interesting metal oxides, such as MnO2, NiO, MgO and V2O5, are O3 destruction materials. In a conventional ozone based ALD process for these materials, a high surface loss of the O3 will occur and result in a poor quality film.

Describe the existing solutions and their drawbacks.

To compensate for the surface loss, a large O3 dose is required. However, this will cause many disadvantages, for example EOT penalty if the ALD process is used for gate dielectric stack. In addition, the high non-uniformity in thickness cannot be resolved by simply increasing the dose.

Describe the novelty features and the benefits of the proposed invention over the current solution

We propose a three-step ozone based ALD process: Metal precursor – O3 – NxOy, to passivate the metal oxide surface at the end of the cycle and minimize the parasitic surface loss (destruction) of O3 dose. Compared with the conventional ozone based ALD, an additional pulse of NxOy is employed to passivate the metal oxide surface. By passivating the surface, the required O3 dose will be reduced and the non-uniformity of film will be improved.

Other proposed solutions include Hämäläinen, et al. who tried to solve the non-uniformity issue by rotating the substrate during the growth. [ref]: Journal of The Electrochemical Society, 156 D418-D423 (2009).