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%I2P% High dielectric Constant gate insulator in Cmos Imager Pixels.

IP.com Disclosure Number: IPCOM000223724D
Publication Date: 2012-Nov-26
Document File: 1 page(s) / 27K

Publishing Venue

The IP.com Prior Art Database

Abstract

Image sensor leakage reduction by implementation of a hybrid high K stack which includes a dielectric layer under the high K.

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%I2P% High dielectric Constant gate insulator in Cmos Imager Pixels .

Pixel transistors all see SiO2 underlayer in a dielectric sandwich. The SiO2 underlayer reduces interface states, yet the hiK dielectric can reduce the effective tox without adding gate oxide leakage current.

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