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Method and System for Enhancing Precision of Compact FET Models

IP.com Disclosure Number: IPCOM000226331D
Publication Date: 2013-Mar-27
Document File: 2 page(s) / 28K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method and system for enhancing precision of compact Field-Effect Transistor (FET) models for assessing speed and leakage performance by using a Compact Model Enhancement Model (CMEM) is disclosed. The CMEM model aligns a base model with a reference model in order to enhance the precision of the compact FET models.

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Method and System for Enhancing Precision of Compact FET Models

Currently compact Field-Effect Transistor (FET) models are not sufficiently accurate in all voltage regions or as a function of length, width, temperature and corner conditions. For example, a compact Metal Oxide Semiconductor Field-Effect Transistor (MOSFET) model may be skewed for better accuracy in the ON saturation region while an Integrated Circuit Quiescent Current (IDDQ) leakage model is specifically designed for OFF region accuracy. Both models are required to be executed separately in order to assess speed and leakage performance accurately. This is inconvenient and increases computation time.

Disclosed is a method and system for using an existing compact model as a starting point and then multiplying alignment factors (AF) onto the compact model's DC outputs to enhance the overall precision of the compact model's output. The enhancing of the compact model's output is performed by a Compact Model Enhancement Model (CMEM). The CMEM model aligns a base model with a reference target. The reference target may be a model, data, targets or a combination of model, data and target.

Initially, relative AF between the reference target and the base model is calculated as a function of terminal voltages for various conditions such as width, length, temperature, corner and uplift factor. This results in a large collection of AF tables. In case of enhancing the compact MOSFET model with improved ability...