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Method of deactivating partially cut end fins

IP.com Disclosure Number: IPCOM000234148D
Publication Date: 2014-Jan-14
Document File: 3 page(s) / 107K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method to prevent the development of a leakage path caused by a partially cut end fin by implanting and electrically deactivating the partially cut end fins.

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Page 01 of 3

Title

Method of deactivating partially cut end fins

Abstract

Disclosed is a method to prevent the development of a leakage path caused by a partially cut end fin by implanting and electrically deactivating the partially cut end fins.

Problem

In fin cut last, a partially cut end fin is a problem, as it can be a potential leakage path.

Figure 1: Fin cut last: Silicon fin pull-out

Figure 2: Direct Si fin removal


Page 02 of 3

Solution/Novel Contribution

To prevent the potential for a leakage path forming, the novel solution is to implant and electrically deactivate the partially cut end fins

The Ion implant may


1. Deactivate the end fins


2. Amorphize the end fins


3. Make the fins highly defective

Figure 3: Solution to the partially cut fin

Method/Process



Page 03 of 3

Figure 4: Method

Advantages over Previous Solutions

No previous solutions partially cut end fin leakage path. The proposed solution is the simplest solution for partially cut fins.

Acronyms and abbreviations used in this article: Si: Silicon

SiN: Silicon Nitride

CMP: Chemical-Mechanical Planarization Litho: Lithography

RIE: Reactive Ion Etching