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Structure to enable reliable and consistent fast electromigration wearout mechanism testing

IP.com Disclosure Number: IPCOM000234573D
Publication Date: 2014-Jan-20
Document File: 2 page(s) / 23K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method to make Electromigration (EM) stressing and testing available in line with a consistent temperature profile across the line. The method compensates for the joule heating by using a magnetic field structure to induce the hall effect on the line structure.

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Structure to enable reliable and consistent fast electromigration wearout mechanism testing

Current industry standard Electromigration (EM) stressing for qualification and monitoring entails a process that cannot be done in line. Wafers must be stressed with a power supply in an oven for multiple days at a high temperature. These wafers need to be diced, built in to modules, and stressed in specialized equipment.

Work has been done in the art to make EM stressing and testing done in line by using ultra high current. The problem with these current methods is that the data from traditional EM testing does not scale with these high currents. One of the main issues is the design of the EM line structures. Due to the structures being long lines with vias on each side, the temperature profile of the line with the high current creates an uneven temperature profile across the line. In the middle of the line, there is much more heat,

while at the end of the lines near the via, the vias act like a heat sink to distribute some of the heat.

Figure 1: EM Line Structure with uneven temperature profile

This high current stress causes breakages to occur in the middle of the line when seen at lower current at the via/line interface. This is because, according to Black's Equation, the meantime to fail is: which weighs temperature greater than j (current density)

The solution is a method to compensate for the joule heating by using a magnetic field structure to induce the Hall Eff...