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A Method and System for Determining Performance Degradation due to Bias Temperature Instability using Interleaved Ring Oscillators

IP.com Disclosure Number: IPCOM000234584D
Publication Date: 2014-Jan-20
Document File: 3 page(s) / 79K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method and system is disclosed for determining performance degradation due to Bias Temperature Instability (BTI using one or more interleaved ring oscillators.

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Page 01 of 3

A Method and System for Determining Performance Degradation due to Bias Temperature Instability using Interleaved Ring Oscillators

A primary factor of performance degradation for a semiconductor chip is Bias Temperature Instability (BTI), characterized by a decrease in transistor drive current due to an applied voltage over time.

Fig. 1 depicts performance degradation of a FinFET semiconductor device due to a kind of BTI, known as Negative Bias Temperature Instability (NBTI).

Figure 1

BTI can be characterized using performance monitoring vehicles such as, ring oscillators.

Disclosed is a method and system for determining performance degradation due to BTI using one or more interleaved ring oscillators (ILROs).

The system includes a semiconductor chip, wherein the semiconductor chip includes

the one or more ILROs. Further, each ILRO includes a pair of identical ring oscillators interleaved with one another in such a manner so as to occupy a common physical space. Fig. 2 illustrates a schematic of an ILRO of the one or more ILROs.

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Page 02 of 3

Figure 2

The method includes measuring performance characterized by frequency/leakage, for both of the identical ring oscillators at a starting time T0. For illustrative purposes, the identical ring oscillators are called, ring oscillator A and ring oscillator B. The difference in frequency/leakage, denoted as ∆AB for the identical ring oscillators is indicative of an effect of random Across Chip Variation (random ACV) upon BTI. In an embodiment, one or more differences in frequency/leakage for both the identical ring oscillators are measured for each of the one or more ILRO's. The effect of random ACV is characterized by the standard deviation...