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Uniformity Control with Phase-Locked RF Source on a High Density Plasma System

IP.com Disclosure Number: IPCOM000234866D
Publication Date: 2014-Feb-11
Document File: 6 page(s) / 96K

Publishing Venue

The IP.com Prior Art Database

Abstract

Semiconductor device manufacturing continues to achieve decreased feature sizes with a corresponding density increase along device area and volume. The consequence of manufacturing semiconductor devices with a higher level of integration remains a vexing challenge to achieving repeatable target yields, minimizing plasma induced damage, and optimizing process throughput all while gaining the technological advantage to reach the next high-performance node. We present control mechanisms to improve the fidelity of plasma density and the control of ion energies for a high-density plasma source. For a high-density plasma (HDP) source, plasma generation is associated with the coupling of RF power to the plasma discharge through a coil antenna arrangement. The RF bias, coupled to a substrate, creates the ion energies utilized for material etch processing associated with high-volume semiconductor manufacturing. Our fundamental technique is based on a frequency-and-phase locking controller. For the RF source, this frequency-and phase locking enables precise control of the electromagnetic field emissions from the antenna. By amplitude and relative phase manipulation of a dual-RF power supply scheme providing the excitation for the source antenna, the constructive-deconstructive interaction of the coil fields enables the finest control of plasma density and uniformity along the wafer area. We further exploit the frequency-and-phase locking capability with the bias RF power delivery system to control the width and skew of the ion energy distribution function (IEDF). The coupling of these RF power delivery systems to a high-density plasma source formulates a systematic control of plasma parameters, ameliorating the state of thin-film manufacturing capability closer to the elusive atomic layer etch facility necessary to achieve future semiconductor nodes. Index Terms - Automatic control, digital control, frequency locked loops, IEDF, phase frequency detector, phase locked loops, plasmas, plasma density, plasma properties, plasma sheaths, radio frequency, real-time systems, RF Signals

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Abstract

Semiconductor device manufacturing continues to achieve decreased feature sizes with a corresponding density increase along device area and volume. The consequence of manufacturing semiconductor devices with a higher level of integration remains a vexing challenge to achieving repeatable target yields, minimizing plasma induced damage, and optimizing process throughput all while gaining the technological advantage to reach the next high-performance node. We present control mechanisms to improve the fidelity of plasma density and the control of ion energies for a high-density plasma source. For a high-density plasma (HDP) source, plasma generation is associated with the coupling of RF power to the plasma discharge through a coil antenna arrangement. The RF bias, coupled to a substrate, creates the ion energies utilized for material etch processing associated with high-volume semiconductor manufacturing. Our fundamental technique is based on a frequency-and-phase locking controller. For the RF source, this frequency-and phase locking enables precise control of the electromagnetic field emissions from the antenna. By amplitude and relative phase manipulation of a dual-RF power supply scheme providing the excitation for the source antenna, the constructive-deconstructive interaction of the coil fields enables the finest control of plasma density and uniformity along the wafer area. We further exploit the frequency-and-phase locking capability with the bias RF power delivery system to control the width and skew of the ion energy distribution function (IEDF). The coupling of these RF power delivery systems to a high- density plasma source formulates a systematic control of plasma parameters, ameliorating the state of thin-film manufacturing capability closer to the elusive atomic layer etch facility necessary to achieve future semiconductor nodes.

Index Terms - Automatic control, digital control, frequency locked loops, IEDF, phase frequency detector, phase locked loops, plasmas, plasma density, plasma properties, plasma sheaths, radio frequency, real-time systems, RF Signals

Introduction

A semiconductor fabrication facility uses plasma systems and other semiconductor manufacturing tools [2] for deposition with subsequent etch processes to fabricate devices for the construction of integrated circuits. As manufacturers of consumer electronics continue to commoditize user capabilities ubiquitously in low cost devices, the density of integrated circuits becomes critical, commensurate with the plasma systems used in their fabrication. RF power

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Uniformity Control with Phase-Locked RF Source on a High Density Plasma System

David J. Coumou, Dennis M. Brown MKS Instruments Inc., ENI Products


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delivery systems are the principal sub-systems in the plasma processing reactors used for volume thin-film manufacturing [1]. The deposition of dielectric and insulating films uses RF power for Plasma Enh...