Browse Prior Art Database

LIGHT-EMITTING DIODE WITH MG DOPING PROFILE OPTIMIZED FOR HIGH TEMPERATURE OPERATION

IP.com Disclosure Number: IPCOM000235614D
Publication Date: 2014-Mar-12

Publishing Venue

The IP.com Prior Art Database

Related People

AURELIEN J. F. DAVID: AUTHOR [+3]

Abstract

Devices and methods for fabricating light-emitting diodes with a magnesium doping profile optimized for high temperature operation are disclosed.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 11% of the total text.

Page 01 of 25

LIGHT-EMITTING DIODE WITH MG DOPING PROFILE OPTIMIZED FOR HIGH TEMPERATURE OPERATION

ABSTRACT

    Devices and methods for fabricating light-emitting diodes with a magnesium doping profile optimized for high temperature operation are disclosed.


Page 02 of 25

LIGHT-EMITTING DIODE WITH MG DOPING PROFILE OPTIMIZED FOR HIGH TEMPERATURE OPERATION

FIELD

    [01] The disclosure relates to the field of LED device structure and fabrication and more particularly to techniques for fabricating light-emitting diodes with a magnesium doping profile optimized for high temperature operation.

BACKGROUND

    [02] Legacy GaN-based LED structure comprises an AlGaN electron-blocking layer (EBL). This layer is usually doped with Mg in order to ensure hole injection into the active region. A sufficient amount of Mg is necessary to ensure good hole injection. However, we have found that limiting the amount of Mg in the vicinity of the active region could lead to improved internal quantum efficiency. Therefore, the tradeoff between these two effects leads to a need to optimize the Mg profile so that efficient injection can be achieved while minimizing the detrimental effect of Mg.

    [03] Moreover, the aforementioned technologies include techniques to perform fabricating light-emitting diodes with a magnesium doping profile optimized for high temperature operation. Therefore, there is a need for improved approaches.

SUMMARY

    [04] In a first aspect, light-emitting diodes are disclosed characterized by a Mg doping profile optimized to produce an EQE greater Than 70% at a current density of 100 A/cm-2 at room temperature, and an EQE greater than 60% at a current density of 100 A/cm-2 at a temperature of 120 degrees C.

    [05] In a second aspect, light-emitting diodes are disclosed characterized by a Mg doping profile optimized to produce an EQE greater than 60% at a current density of 100 A/cm-2 at a temperature of 120 degrees C.

2

 


Page 03 of 25

BRIEF DESCRIPTION OF THE DRAWINGS

    [06] Those skilled in the art will understand that the drawings, described herein, are for illustration purposes only. The drawings are not intended to limit the scope of the present disclosure.

    [07] FIG. 1 shows a simplified diagram of photoluminescence efficiency curves used in optimizing processes for fabricating light-emitting diodes with a magnesium doping profile optimized for high temperature operation, according to some embodiments.

    [08] FIG. 2 shows a simplified diagram of electroluminescence efficiency results as used in optimizing processes for fabricating light-emitting diodes with a magnesium doping profile optimized for high temperature operation, according to some embodiments.

    [09] FIG. 3 shows a simplified sketch showing the band profile of the Mg being modified so that the Mg turn-on occurs at an optimal position in the structure when used in optimizing processes for fabricating light-emitting diodes with a magnesium doping profile optimized for high temperature operation, accordin...