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A method to generate discrete spatial distributions (wafer-maps) from continuous time-dependent breakdown distributions

IP.com Disclosure Number: IPCOM000235777D
Publication Date: 2014-Mar-25
Document File: 2 page(s) / 35K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a methodology to establish a link between time-dependent dielectric breakdown (TDDB) information and spatial context in spatial wafer maps.

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A method to generate discrete spatial distributions (wafer-maps) from continuous time-dependent breakdown distributions

As scaling continues, dielectric time-dependent reliability has become a major challenge for advanced semiconductor technologies. The dielectric thickness or spacing becomes significantly smaller or thinner (e.g., low-k or middle-of-line dielectrics, or high-k and SiO2 dielectrics). Process controls for geometrical and/or process variability becomes critically important to dielectric reliability. Defects related time-dependent dielectric breakdown generally are non-uniformly distributed in time.

Spatial wafer-maps are crucial tools to characterize yields and defects as a way to identify the root-cause of deficiencies in the manufacturing process (e.g., to investigate the potential correlations of defects). However, no reported work relates to the defects of time-dependent breakdown to spatially distributed defects or to wafer-maps due to two fundamental problems.

The first problem is that spatial wafer-maps and/or distributions in yield studies (t=0) do not involve time-dependence. Defect distributions in space or wafer-maps are discrete and random.

The second problem is that conventional wafer-maps with specified time-to-breakdown values fundamentally do not contain randomness in space. Time-to-breakdown values
are continuous in time. These maps are arbitrary and are not able to provide
quantitative information such as a spatial statistical dist...