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Structure and Method to form buried resistor under other devices

IP.com Disclosure Number: IPCOM000235791D
Publication Date: 2014-Mar-25
Document File: 4 page(s) / 54K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method to form a resistor structure with superior thermal conductivity and a much higher density circuit. The invention provides a technology to form a resistor under buried oxide.

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Structure and Method to form buried resistor under other devices

A resistor is a critical passive device for Very Large Scale Integration (VLSI) circuits. Scaling continues as the circuit becomes denser and superior thermal conductivity is required. Current technology for resistors, especially on Silicon on Insulator (SOI) applications, does not meet this need because the oxide layer is buried underneath circuits that have poor thermal conductivity.

The invention presents a new resistor structure and method to form the same with a superior thermal conductivity. In addition, it provides a much higher density circuit, which is another significant advantage of this invention. The invention provides a technology to form a resistor under buried oxide, and is comprised of:

• Resistor connected to bulk substrate for super thermal conductivity • Precision resistor with excellent thermal coefficient • Buried resistor (under BOX) allows for active devices to be built in above SOI for high density circuits

Figure 1: Buried resistor under other devices

Figure 2: Start with 22nm POR substrate (with N+ Epi layer between BOX and silicon substrate)

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Figure 3: Moat isolation formed along with DT process (no need of extra process)

Figure 4: RX Shallow Trench Isolation (STI) process

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Figure 5: Form active devices in SOI layer

Figure 6: Form contacts for buried resistor (BI) and form contacts for active device in SOI

Figure 7: Embodiment II with po...