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Method and System for Integrating One or More Fins by Growing DCS Epitaxy Based Silicon Layer

IP.com Disclosure Number: IPCOM000235799D
Publication Date: 2014-Mar-25
Document File: 3 page(s) / 90K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method and system for reducing defects in merging one or more epitaxial fins in a source or a drain area is disclosed. The reduced defects may be achieved by growing Dichlorosilane (DCS) epitaxial silicon layer on the one or more epitaxial fins.

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Method and System for Integrating One or More Fins by Growing DCS Epitaxy Based Silicon Layer

Disclosed is a method and system for reducing defects in merging one or more epitaxial fins in a source or a drain area. The method and system involves growing of Dichlorosilane (DCS) epitaxial silicon layer on one or more epitaxial fins to facilitate a epitaxial growth of, but not limited to, a Phosphorous doped Silicon (Si:P) and a Phosphorous doped Silicon Carbon (Si:P/SiCP). The DCS epitaxial silicon layer may be grown prior to a deposition of the Si:P or the SiCP on the one or more epitaxial fins. The deposition of the Si:P/SiCP may perform getter operation on the one or more epitaxial fins. The deposition of the Si:P/SiCP may also clean up a Oxygen and Carbon (O+C) contamination present on 110- surfaces of the epitaxial silicon layer. Subsequently, the deposition of the Si:P/SiCP may provide a feasible silicon surface for the epitaxial growth of the Si:P/SiCP on the one or more epitaxial fins. The growing of the DCS epitaxial silicon layer on the one or more epitaxial fins is represented in the figure 1.

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Figure 1

The merging of the one or more epitaxial fins coupled with the growth of DCS epitaxial silicon layer is represented in the Figure 2.

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Figure 2

Thus, the method and system described herein reduces defects in nFET fin merging regions. Further, the method and system reduces defects in merging of one or more epitaxial fins compara...