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Utilizing White Light Interferometry for post-CMP Dishing Measurements in TSV Applications

IP.com Disclosure Number: IPCOM000236150D
Publication Date: 2014-Apr-09
Document File: 2 page(s) / 115K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a new process technique to use White Light Interferometry (WLI) to make post-chemical mechanical planarization (CMP) dishing measurements in semiconductor processing.

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Title

Utilizing White Light Interferometry for post-CMP Dishing Measurements in TSV Applications

Abstract

Disclosed is a new process technique to use White Light Interferometry (WLI) to make post-chemical mechanical planarization (CMP) dishing measurements in semiconductor processing.

Problem

The current state-of-the-art for inspecting post-chemical mechanical planarization (CMP) dishing uses a high resolution profilometer (HRP) or atomic force microscope (AFM), which can cause throughput bottlenecks in the device process line.

Post-CMP dishing is the peak to valley difference of a material layer that is adjacent to a different material, having a different selectivity to CMP process conditions.

Figure 1: Post-CMP dishing; peak to valley differences in material layers

The current process on record (POR) for post-CMP dishing measurement uses very slow AFM or HRP.

Figure 2: Current process

A faster technology is needed for making post-CMP dishing measurements.

Solution/Novel Contribution

The novel contribution is a technique to use White Light Interferometry (WLI) to make post-CMP dishing measurements in semiconductor processing. There is an inherent "films effect" perceived that could have made this idea inconceivable until now.

Method/Process

The technique modifies and applies previously unused measurement technology to make a measurement that was typically done with other, slower tools. As long as the measurement is kept on the same material surface, this method...