Browse Prior Art Database

Improved SAC Cap Formation - Structure and Method

IP.com Disclosure Number: IPCOM000236382D
Publication Date: 2014-Apr-23
Document File: 4 page(s) / 132K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method to use a short channel mask to minimize deposition technique variations.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

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Improved SAC Cap Formation - Structure and Method
Due to device pitch shrinking, a self-aligned cap is inevitable for advanced nodes, 10NM and beyond. The creation of void-free gap-fill for insulators films is a big challenge. New deposition techniques to achieve void-free gap-fill, such as dep-etch-dep techniques, also present a big challenge due to huge pattern dependencies.

The novel solution is a method to use a short channel mask to minimize deposition technique variations.

The following figures represent the process flow of the novel method. Step 1

Step 2

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Step 3

Step 4

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Step 6

Step 7

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Step 8

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