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Novel Method for robust Self aligned cap formation for Advanced Technology Nodes

IP.com Disclosure Number: IPCOM000236471D
Publication Date: 2014-Apr-29
Document File: 5 page(s) / 176K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method to improve the Self-Aligned Contact (SAC) cap formation with a few process techniques.

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This is the abbreviated version, containing approximately 100% of the total text.

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Novel Method for robust Self aligned cap formation for Advanced Technology Nodes

Due to device pitch shrinking, self-aligned cap is inevitable for advanced nodes 10NM and beyond. The challenge is to have void-free gap-fill for insulators films. New deposition techniques to achieve void-free gap-fill (e.g., dep-etch-dep techniques) present a big challenge due to huge pattern dependency.

Disclosed is a method to improve the Self-Aligned Contact (SAC) cap formation with a few process techniques.

The following figures represent the invention process flow in a preferred embodiment.

Figure 1: Post W-gate Chemical-Mechanical Planarization (CMP)

Figure 2: W-recess

Figure 3: SAC SiN deposition

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Figure 4: Oxide dep on SiN

Figure 5: Oxide CMP stop on SiN (measure remaining oxide thickness on dense pattern)

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Figure 6: Oxide deglaze SiN RIE selective to oxide (target removal thickness is the oxide thickness previously measured)

Figure 7: Oxide etch (wets or dry) selective to SiN

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Figure 8: SiN cap CMP selective stop on oxide

Figure 9: MOL oxide dep contact formation

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Figure 10: W-contact metal deposition CMP

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