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BDSCR with tunable trigger voltage

IP.com Disclosure Number: IPCOM000237143D
Publication Date: 2014-Jun-05
Document File: 3 page(s) / 143K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is an electrostatic discharge (ESD) Standby Continuous Replication (SCR) protection device comprising an anode that is self-aligned to a gate and a cathode that is self-aligned to another gate. This allows the trigger voltage(Vt1) to be adjusted by gate to junction dimension

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BDSCR with tunable trigger voltage

An input/output (I/O) pad with a large voltage range needs an Electrostatic Discharge (ESD) protection device with low capacitance and high trigger voltage (10V - 30V). An example of this is an antenna port of a cellphone front end.

Different applications need different voltage ranges. The ideal device would have a tunable trigger voltage to adapt to the different applications. Existing devices do not meet the stated needs; those include:

• Diodes: need to stack many diodes to achieve high voltage • ESD Field Effect Transistors (FET)s: high capacitance • Diode Triggered Standby Continuous Replications (SCRs): low trigger voltage
• Breakdown SCRs: need a tunable trigger voltage

The novel contribution is an electrostatic discharge (ESD) SCR protection device that allows the trigger voltage (Vt1) to be adjusted by the gate to junction dimension (G2J). By varying G2J from 0.3um to 0.6um, Vt1 can be increased from 15V to 25V while the failure current ( It2) remains stable. Vt1 is equivalent whether measured with a Direct Current (DC) supply or with a Transmission Line Pulse (TLP) setup.

The SCR device comprises an anode that is self-aligned to a gate and a cathode that is self-aligned to another gate. It also contains an N type well (NW) to a P type well (PW)

junction in between the two gates, with a variable distance from the gates to the NW-PW junction. The device can be built in a bulk silicon wafer or in a Semiconductor o...