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Method for Producing an Interconnect Structure with an Integrated Cobalt Film

IP.com Disclosure Number: IPCOM000237517D
Publication Date: 2014-Jun-19
Document File: 2 page(s) / 31K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method is disclosed for integrating a Cobalt (Co) film in an interconnect structure in order to prevent diffusion of Copper (Cu) into a dielectric portion of the interconnect structure.

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Method for Producing an Interconnect Structure with an Integrated Cobalt Film
In a typical Chemical Mechanical Planarization (CMP) process, a Cobalt (Co) divot can be generated as illustrated in Fig. 1.

Figure 1

The Co divot can degrade electro-migration causing Copper (Cu) diffusion into a dielectric (ULK) portion of the interconnect structure.

Disclosed is a method for integrating a Co film in an interconnect structure in order to prevent Cu diffusion into a dielectric portion of the interconnect structure.

In one implementation, the method includes performing a Cu CMP process to obtain the structure illustrated in Fig. 2.

Figure 2

Subsequently, the upper portion of the interconnect structure is etched to obtain the structure illustrated in Fig. 3.

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Page 02 of 2

Figure 3

Thereafter, a Co layer is deposited on the interconnect structure as illustrated in Fig. 4.

Figure 4

Finally, a portion of the Co layer is etched in order to wrap the Cu with the Co layer as illustrated in Fig. 5.

Figure 5

Thus, the method disclosed herein produces an interconnect structure with an integrated Co film, which prevents diffusion of Cu into the dielectric portion of the interconnect structure. The method disclosed herein also helps in improving electro-migration/yield. In addition, the method disclosed herein alleviates concerns with respect to galvanic effects as only Co is exposed.

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