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SiN for wafer-to-wafer bonding: material, structure, and process

IP.com Disclosure Number: IPCOM000237521D
Publication Date: 2014-Jun-19
Document File: 1 page(s) / 20K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that uses a modified Silicon Nitride (SiN) for wafer bonding.

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SiN for wafer-to-wafer bonding: material, structure, and process

Low-temperature wafer bonding is critical for three-dimensional (3D) integration technology. Current processes on record (POR) and prior art all focus on oxide-to-oxide bonding. Two big concerns over the effective bonding oxide material, such as low-temperature oxide, are weak coherent strength and fast and high wafer absorption.

Using Silicon Nitride (SiN) as the bonding material can address these challenges. However, no prior art shows success in low-temperature bonding of SiN. SiN is also challenging for high temperature bonding, due to a stress-induced voiding issue.

The novel contribution is a method that uses a modified SiN for wafer bonding. Different from prior art, which uses an oxide layer on top of SiN, the method modifies bulk SiN \ by depositing a Silicon Oxynitride (SiON) bonding film, or a multi-layer SiN/SiO thin film stack. The modified SiNO provides crack arrest and low water absorption.

The bonding film includes Tetraethyl Orthosilicate (TEOS) Chemical Mechanical Planarized (CMPed)/modified-SiN, where the modified SiN can be a quasi-homogeneous film of SiON or SiNO, or a multi-layer heterogeneous film of alternative SiN/SiO stacks.

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