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Method of Modeling and Enabling Self-Heating Effect in Semiconductor Devices

IP.com Disclosure Number: IPCOM000237687D
Publication Date: 2014-Jul-02
Document File: 4 page(s) / 287K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is an improved method for enabling a self-heating effect for a multiple-finger Field Effect Transistor (FET) in an extraction flow. The method correctly distinguishes between an outer finger FET and an inner finger FET so that each can have different thermal conductance/resistance.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 69% of the total text.

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Method of Modeling and Enabling Self-Heating Effect in Semiconductor Devices

A method is needed to enable a self-heating effect for a multiple-finger Field Effect Transistor (FET) in an extraction flow. For a multi-finger (Nf) FET, self-heating thermal conductance is found to have both an area (A) term and a perimeter (P) term. (Figure 1)

Figure 1: Multi-Finger FET

In an extraction flow, however, each finger FET is netlisted separately. Passing Nf information to each finger does not distinguish an outer finger from an inner finger,

which have a same area but different perimeters. This is a drawback of prior arts.

Figure 2: Multi-finger FET layout

Figure 3: Mutli-finger layout illustration

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Figure 4: In extracted netlist, each finger is netlist as a separate FET.

The novel contribution is an extraction method that does not require passing the total finger number (Nf) of a multi-finger FET to each finger FET when netlisting

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each finger FET. The method also correctly distinguishes between an outer finger FET and an inner finger FET so that each can have different thermal conductance/resistance. The method applies to both planar FETs and finFETs.

To implement the method:

1. Extract the number (k) of dummy fingers (PARADEV) adjacent to each (active) finger FET

• k = 0: Inner FET in a multi-finger FET • k = 1: Outer FET in a multi-finger FET • k = 2: Single-finger FET
2. Do this for both multi-finger FETs and single-finger FETs
3. For...