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High mobility channel regrowth on replacement gate FIN first wire last gate-all-around Si Field Effect Transistors (FETs)

IP.com Disclosure Number: IPCOM000237930D
Publication Date: 2014-Jul-22
Document File: 5 page(s) / 426K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a technique to implement a high mobility channel into the fin first wire last process. This boosts performance.

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This is the abbreviated version, containing approximately 100% of the total text.

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High mobility channel regrowth on replacement gate FIN first wire last gate -
-all

all- Si Field Effect Transistors (

The current replacement gate fin first wire last process is mainly focused on a Silicon (Si) channel only process.

This novel approach provides an opportunity to implement a high mobility channel into this fin first wire last process and has the advantage of further boosting performance .

The following figures represent the components and process in a preferred embodiment .

-around

around

((FETs

FETs)

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Figure 14: Example of ~70% SiGe grown over Si Fin

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