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New Precursors for Metal-Containing Film Deposition

IP.com Disclosure Number: IPCOM000238308D
Publication Date: 2014-Aug-15
Document File: 14 page(s) / 87K

Publishing Venue

The IP.com Prior Art Database

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NEW PRECURSORS FOR METAL-CONTAINING FILM DEPOSITION

Disclosed are precursors having Formula I:

M(dmamX)yLz

wherein

-     M = Ni, Co, Cu, Ag, Au, Mn or Fe;

-     dmamX being 1-dimethylamino-2-methyl-X;

-     X being independently methanolate, ethanolate, butanolate, propanolate, pentanolate;

-     z and y are integers greater than zero;

-     L being and adduct: independently a neutral ligand, possibly selected from, without limitation, tetrahydrofuran (THF), diglyme, triglyme, tetraglyme, dimethyl ether (DME) or a combination thereof; or

-     L being selected from but without limitation an anion, a b-diketonate, an amide or a combination thereof.

Exemplary precursors include Cu(dmamb)2, copper bis(1- dimethylamino-2-methyl-2-butanolate), Cu[OC(Me)(Et)CH2NMe2]2, a stable, volatile, and non-viscous, liquid precursor; and Ni(dmamb)2, a liquid precursor.

Methods of forming metal-containing layers on a substrate by providing a vapor comprising the disclosed precursors are also disclosed.

Methods of manufacturing semiconductor structures, the method comprising providing a vapor comprising the disclosed precursors and directing the vapor to a substrate assembly to form a metal-containing layer on at least one surface of the substrate assembly using a vapor deposition process.

The basic structure of the monovalent bidentate aminoalkoxide ligand dmae (dimethylaminoethoxide) provides the starting point.  Cu[OCMe2CH2NR2]2 where R is either methyl or ethyl was synthesized according to J. W. Park, H. S. Jang, M. Kim, K. Sung, S. S. Lee, T.-M. Chung, S. Koo, C. G. Kim, Y. Kim, Inorg. Chem. Commun., 7, 463 (2004).  Thermal decomposition of Cu(dmamp)2 produced particles of metallic copper.  Introducing different alkyl groups at the α-carbon did work favorably.  The stable, volatile, and non-viscous, liquid precursor Cu(dmamb)2, copper bis(1- dimethylamino-2-methyl-2-butanolate), Cu[OC(Me)(Et)CH2NMe2]2 was synthesized.  The same strategy worked well for the precursors of nickel, the liquid precursor being Ni(dmamb)2.  These metal may be suitable for MOCVD and ALD are discussed.

Background

ALD and CVD provide flexibility when designing the electronic device by reducing the number of processing phases to obtain the desired product for instance.  The main advantages of these new techniques are the deposition of conformal film on more and more complex structures as well as a selective deposition in the case of Metal deposition such as copper, silver or gold.

With the high scaling of semiconductor devices, metal deposition becomes very challenging.  New high performance interconnection materials need increases as device feature sizes shrink while density increases.  ALD (Atomic Layer Deposition) and/or CVD (Chemical Vapor Deposition) are 2 useful techniques for deposition of metal thin films as compared to the other methods such as PVD (Physical Vapor Deposition), molecular beam epitaxy, sputtering…etc.

On the other hand, to al...