Method to fabricate Inverse T-shaped FinFET structures independent of fin pitch
Publication Date: 2014-Aug-27
The IP.com Prior Art Database
Disclosed is a structure for improved drive current per foot print
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Method to fabricate Inverse T -shaped FinFET structures independent of fin pitch
Inverse T-shaped fins provide improved drive current per footprint, but uniform manufacturing of those fins is challenging.
The novel solution is to, instead of forming the inverse T-shaped fins by recess reactive ion etching (RIE), start with an Extremely Thin Silicon on Insulator (ETSOI) wafer, deposit a dielectric, form trenches, and use epitaxy to grow the fin.
Figure 1: Start with an ETSOI wafer, choose SOI thickness as desired
Figure 2: Form dielectric
Figure 3: Form mask with openings where the later fins will be located
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Figure 4: RIE dielectric
Figure 5: Remove mask
Figure 6: Epitaxial growth of the fin
Figure 7: Final structure. No fin height variation and remaining T-shape bottom thickness variation.
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