BENZYL METAL AND RELATED ORGANOMETALLIC PRECURSORS FOR THIN FILM DEPOSITION
Publication Date: 2014-Nov-12
The IP.com Prior Art Database
Materials for depositing metal-containing films are presented. The materials have the general formula:
wherein M is any metal element in the periodic table, each R is independently selected from H, C1-C6 alkyl, C1-C6 alkoxy, C1-C6 alkylsilyl, C1-C6 perfluorocarbon, C1-C6 alkylsiloxy, C1-C6 alkylamino, alkylsilylamino, aminoamido, piperidines, pyridines, and halogenes (F, Cl, Br, I), x and y are integers and determined by the oxidation state of central M atom. More particularly, M may be Be, B, Mg, Al, Si, P, S, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ga, Ge, As, Se, Sr, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, W, Re, Os, Ir, Pt, Au, Hg, Tl, Pb, or Bi. Exemplary organometallic precursor include Ge(-CH2-(C6H6))4, Ge(-CH2(C6H6)2Et2, Ge(-CH2-(-CC(CH3)CHC(CH3)CHC(CH3)-))4, Te(-CH2-(C6H6))2, Sb(-CH2-(C6H6))3.
The organometallic precursor may be synthesized as follows:
The metal-containing film depositions are carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD. A reducing fluid may also be used in the deposition process. Exemplary reducing fluids include H2, NH3, SiH4, Si2H6, Si3H8, hydrogen containing fluids, hydrogen radicals, and mixtures thereof. Alternatively, an oxidizing fluid may be used in the deposition process. Exemplary oxidizing fluids include O2, H2O, H2O2, O3, oxygen containing fluids, oxygen radicals, and mixtures thereof.
Brief Description of the Prior Art
Recently, requirements of metallorganic compounds as chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) precursors for semiconductor manufacturing process are increasing because of the high surface coverage of deposited films than that by physical vapor deposition method (PVD, sputtering method). For example, production of GeSbTe alloy thin films, which are used in phase change memory device, is changing from PVD to CVD/ALD with increasing the capacity of memory cell. Samsung’s demonstration sample of 512 Mbit PRAM was made by PVD method under 90 nm technology node processes (Feb 2007), however CVD/ALD methods will be applied for the production of ~Gbit scale PRAM devices. In addition, low temperature, low impurity CVD/ALD deposition of film is one of the main issues. The similar situations are seen in production of other semiconductor devices. As an example, materials for deposition of metallic titanium films are needed, due to the high level of impurities observed in the current processes.
There are many kind of CVD/ALD precursor materials, which are commercially available or not, but they are roughly categorized into few types according to the element bonding to metal atom(s). M-H, M-C, M-N, M-O, M-X (X: halogens), and others. Especially alkylamino metal compounds, M(NRR’)n (n depend on valence sta...