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CHLORIDE PRODUCTION METHOD

IP.com Disclosure Number: IPCOM000239575D
Publication Date: 2014-Nov-17
Document File: 1 page(s) / 27K

Publishing Venue

The IP.com Prior Art Database

This text was extracted from a Microsoft Word document.
This is the abbreviated version, containing approximately 74% of the total text.

CHLORIDE PRODUCTION METHOD

Disclosed are methods to produce high purity metal chloride materials having the general formula MxHyClz, wherein x≥1, y and z are ≥0, and M is selected from the group comprising Ge, Si, B and Al, and materials that may be derived from the described metal chlorides.

A metal containing material (the metal containing material containing at least one metal selected from Ge, Si, B and Al) is provided. A plasma is generated that is capable of vaporizing and/or sputtering the metal using a plasma generating device.  The plasma and the metal containing material are contacted in a chamber containing at least chlorine, chlorine gas, or chlorine atoms and possibly hydrogen (or a hydrogen containing gas such as HCl) in order to generate MxHyClz compound.  The MxHyClz compound may be removed from the chamber.  Example of preferred MxHyClz compounds include GeCl4, SiCl4, SiHCl3, SiH2Cl2, SiH3Cl, Si2Cl6 …, AlCl3, and BCl3.

The plasma may be generated by flowing a plasma input gas through a plasma generating device.  The plasma input gas may be a chlorine containing gas.  The plasma may include a chlorine containing plasma.

The describe method also includes a step of separating the MxHyClz compounds from one or more impurities that could have been generated during the process. Those impurities could for instance be condensed or purged out if they have a high vapor pressure.

Inert gases such as Xe, Ne, Ar, He, or H2 may be present in the reaction chambe...