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A structure and method for monitoring non-isolatable transfer devices in memory elements

IP.com Disclosure Number: IPCOM000239619D
Publication Date: 2014-Nov-19
Document File: 3 page(s) / 341K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is an eDRAM non-isolatable transfer device monitor structure and method for compensation of non-isolatable transfer device variation.

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A structure and method for monitoring non - -isolatable transfer devices in memory

isolatable transfer devices in memory elements

Multiple factors affect the range of margin for getting the charge out of the embedded Dynamic Random Access Memory (eDRAM) cells, including temperature, frequency, transfer device Vt, and transfer device Vt shifts due to device aging. In the advanced technology nodes, the transfer device can no longer be isolated from the cell to be used directly in a monitoring circuit. As a result, Vt variations in the transfer device can no longer be directly measured and used to compensate charge pump voltage. Vt tracking does not cover pump level degradations.

Prior art includes a method to resolve the issue is regulation that utilizes an array device for pump tracking.

The present disclosure introduces a circuit that emulates the function of the DRAM cell transfers to allow the adjustment of the internal voltage to adjust for the previously mentioned variations. This allows for compensation due to array Vt, temperature, frequency, and Vt shift with stress. This approach can be used for Digital-to-Analog Converter (DAC) updates and potential failure notifications.

A novel contribution is an eDRAM non-isolatable transfer device monitor structure and method for compensation of non-isolatable transfer device variation, comprising:

• A plurity of non-isolatable transfer device which connects to the eDRAM capacitive storage element


• A charge and...