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Thin Film Deposition Using Metal Aminoamide Precursors

IP.com Disclosure Number: IPCOM000240237D
Publication Date: 2015-Jan-14
Document File: 2 page(s) / 38K

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Thin film deposition using Metal aminoamide precursors

The use of metal aminoamides precursors for metal film deposition is disclosed. The compounds may be used to deposit metal-containing layers using vapor deposition methods (for instance chemical vapor deposition, atomic layer deposition) with or without plasma.

The method includes: providing a substrate; providing a vapor including at least one compound of the general formula M(R1R2N-(CR3R4)x-NR5)n (M being selected from Mn, Co, Ru, Fe, Ni, Cu; n=2 or 3; x being an integer; each R1-R5 being independently selected from H or an alkyl C1-C6): and contacting the vapor including the at least one compound of general formula M(β-diketiminate)n with the substrate (and typically directing the vapor to the substrate) to form a metal-containing layer on at least one surface of the substrate using a vapor deposition process. Suitable vapor deposition processes include ALD, CVD, PEALD, PECVD, cyclic-CVD or a combination thereof.  Strong reducing agents are used to enhance the deposition mechanism. Those reducing agents are selected from but without limitation: NH3, DiMethyl Zinc (DMZ), DiEthyl Zinc (DEZ), TriMethyl Aluminum (TMA), Diborane and silane; the reducing agent being preferably DMZ. The strong reducing agent may be mixed with an inert gas, such as N2, Ar, He or H2.

A vapor comprising at least one metal-containing compound different than M(β-diketiminate)n (M being selected from Mn, Co, Ru, Fe, Ni, Cu and n=2 or 3) may also be provided and directed to the substrate.  The metal of the at least one metal-containing compound different than M(β-diketiminate)n is selected from the group consisting of Ti, Ta, Bi, Hf, Zr, Pb, Nb, Mg, Al, and combinations thereof.

The formation of metal containing films via Chemical Vapor and Atomic Layer Deposition (CVD and ALD) are very challenging. Aminoamide precursors are promising solutions that allows precursor properties tunability while having high reactivity compared to more complex structures.

The metal amidoamine compounds (i.e., precursors) may have suitable properties (e.g., high vapor pressure, low melting point, and low sublimation point, high thermal stability) for thin film deposition.

The use of strong reducing agent has several benefits; it enhances the reaction mechanism allowing a higher growth rate and a faster reaction. The film quality is also greatly improved as well as the process window. Having a strong reducing gas allows reaction to occur at lower temperature which can be beneficial for depo...