Browse Prior Art Database

TITANIUM FILM DEPOSITION WITH TITANIUM-ARENE COMPLEXES

IP.com Disclosure Number: IPCOM000240722D
Publication Date: 2015-Feb-23
Document File: 22 page(s) / 2M

Publishing Venue

The IP.com Prior Art Database

Abstract

Precursors for deposition of titanium metal film and titanium containing film via chemical vapor deposition (CVD) and atomic layer deposition (ALD) are disclosed. The precursors are organometallic compounds containing titanium and arene and having a general formulae Ti(C6R1R2R3R4R5R6)2 (R1 – R6 is H (hydrogen) or a C1-C6 linear, branched, or cyclic alkyl group ). The synthesis and properties of organometallic titanium arene complexes are presented. The disclosed precursors may be used to deposit pure titanium-metal film, titanium nitride (TiN), titanium carbide (TiC), titanium carbonitride (TiCN), titanium silicide (TinSim), titanium siliconitride (TinSimNk), titanium boride (TinBm), titanium boronitride (TinBmNk), or titanium oxide (TiOx). The titanium-containing films may be deposited using the disclosed precursors in thermal and/or plasma source-enhanced CVD, ALD, pulse CVD or any other type of depositions methods.

This text was extracted from a Microsoft Word document.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 8% of the total text.

Titanium FILM deposition with

TITANIUM-ARENE COMPLEXES

Precursors for deposition of titanium metal film and titanium containing film via chemical vapor deposition (CVD) and atomic layer deposition (ALD) are disclosed. The precursors are organometallic compounds containing titanium and arene and having a general formulae Ti(C6R1R2R3R4R5R6)2 (each R1 – R6 is H (hydrogen) or a C1-C6 linear, branched, or cyclic alkyl group ). The synthesis and properties of organometallic titanium arene complexes are presented. The disclosed precursors may be used to deposit pure titanium-metal film, titanium nitride (TiN), titanium carbide (TiC), titanium carbonitride (TiCN), titanium silicide (TinSim), titanium siliconitride (TinSimNk), titanium boride (TinBm), titanium boronitride (TinBmNk), titanium oxide (TiOx), or titanium nitroxide (TiNO). The titanium-containing films may be deposited using the disclosed precursors in thermal and/or plasma source-enhanced CVD, thermal and/or plasma source-enhanced ALD, pulse CVD, low pressure CVD, subatmospheric CVD, atmospheric pressure CVD, or any other type of depositions methods.

Also disclosed are methods for deposition of titanium / titanium containing film using the Titanium-arene molecules.  The titanium-arene molecule is introduced into a reactor having a substrate disposed therein. At least part of the titanium-arene molecule is deposited onto the substrate to form the titanium containing film.  Exemplary titanium-arene molecules include Ti(m-xylene)2, Ti(toluene)2, Ti(Et-Benzene)2.  The film deposition is performed between 20 ºC and 800 ºC, preferably between 200 ºC and 600 ºC.  The film deposition is performed at a pressure between 0.1 Pa and 105 Pa, preferably between 1 Pa and 102 Pa.  One or more reaction gases may be introduced into the reactor at the same time or at an alternate time as the introduction of the titanium-arene precursor.  The reaction gas may be a reducing agent selected from the group consisting of N2, H2; SiH4; Si2H6; Si3H8; NH3; (CH3)2SiH2; (C2H5)2SiH2; (CH3)SiH3; (C2H5)SiH3; phenyl silane; N2H4; N(SiH3)3; N(CH3)H2; N(C2H5)H2; N(CH3)2H; N(C2H5)2H; N(CH3)3; N(C2H5)3; (SiMe3)2NH; (CH3)HNNH2; (CH3)2NNH2; phenyl hydrazine; B2H6; 9-borabicyclo[3,3,1]nonane; dihydrobenzofuran; pyrazoline; trimethylaluminium; dimethylzinc; diethylzinc; radical species thereof; and mixtures thereof.  The reaction gas may be an oxidizing agent selected from the group consisting of: O2; O3; H2O; H2O2; NO; NO2; carboxylic acids; radical species thereof; and mixtures thereof.

Chemical vapor deposition (CVD) and atomic layer deposition (ALD) have been applied as main deposition techniques for depositing of thin films applied for fabrication of semiconductor devices, transistors, electrodes, sensitized solar cells. The given deposition techniques enables achievement of conformal films (metal, oxide, nitride, etc) through a fine tuning of parameters during the process. The film growth is mainly controlled b...