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A Structure for Noise Reduced TSV Bus

IP.com Disclosure Number: IPCOM000240864D
Publication Date: 2015-Mar-06
Document File: 3 page(s) / 343K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a structure for noise-reduced Through Silicon Vias (TSV) Bus. The proposed solution addresses the problem of coupling between TSV structures and enables a higher density/compact integration of TSV structures.

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A Structure for Noise Reduced TSV Bus

Coupling between Through Silicon Vias (TSV) has a major impact on signal propagation. Current proposed methods include shielding the TSV, keeping reasonable amount of separation between the TSVs etc. However, such methods reduce the density of the TSV structures between the dies, thereby impacting better integration. In addition, introduction of redundant shield structures can use up on-chip estate, which potentially can be used otherwise.

The proposed solution addresses the problem of coupling between TSV structures and enables a higher density/compact integration of TSV structures.

As TSV wafers become very thin, less than approximately 10um of silicon thickness, a new TSV arrangement is possible. Instead of the traditional isolated TSV, surrounded by a dielectric and silicon, this solution details the use of an area of silicon that is removed as a trench. This area is then filled with dielectric and the TSVs are formed in the dielectric only. After wafer thinning and back side expose, a redistribution layer is applied to electrically connect the area of TSV to C4 or similar flip chip interconnect. This allows for a higher density of TSV and can result in improved electrical performance and reduced TSV to TSV coupling.

Figure 1: Proposed dense "clubbed" TSV structure

Figure 2: Multi-Level TSV interconnects with proposed structure

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Figure 3: Method of fabrication

Figure 4: Deep Shallow Trench Isolation (STI) w...