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System and Methods for Air Gap Form First and then Replaced Metal Interconnection Process

IP.com Disclosure Number: IPCOM000241073D
Publication Date: 2015-Mar-24
Document File: 3 page(s) / 53K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed are a system and methods to simplify the process of adapting air gaps to boost device performance. The approach is to form the air gap first and then replace the metal interconnection.

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System and Methods for Air Gap Form First and then Replaced Metal Interconnection Process

As technology nodes continue to decrease in size, air gaps have been adapted to boost device performance for nodes 14nm and greater. The current process on record (POR) air gap requires the use a block mask to form the air gap after the interconnect metal lines are formed, which increases both the number of steps and the cost to execute the process.

The novel contribution is a method to form the air gap first and then replace the metal interconnection. This is a simplified process. The core ideas are to:


1. Form the air gap before the metal interconnection formation


2. Form the replaced metal interconnection after the air gap formation

The following figures illustrate the components and process for implementing the novel system and method in a preferred embodiment.

Figure 1: Start with a sacrificial layer coating (e.g., Organic Planarization Layer (OPL), Optical Dispersive Layer (ODL), etc.) at the desired location for the formation of the air gap and metal interconnection

Figure 2: Perform a sacrificial layer reactive ion etching (RIE) for air gap formation

Figure 3: Deposit an Inter-Layer Dialectric (ILD) insulator layer (e.g., Ultro-low K (ULK), Silicon Carbon (SiC), etc.) to form the air gap

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Figure 4: Chemical Mechanical Planarization (CMP) to stop on the sacrificial layer

Figure 5: Selective removal of the sacrificial layer

Figure 6: Deposit metal liner...