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Method and System for Providing Monoenergetic Very Low Energy Protons for Direct Ionization Irradiation

IP.com Disclosure Number: IPCOM000241487D
Publication Date: 2015-May-05
Document File: 1 page(s) / 37K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method and system is disclosed for beam delivery where very low energy, monoenergetic, protons are generated for direct ionization irradiation near the Bragg peak (60 kilo electron volts (keV)).

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Method and System for Providing Monoenergetic Very Low Energy Protons for Direct Ionization Irradiation

With technology scaling of Complementary Metal-Oxide-Semiconductor (CMOS) devices, proton direct ionization is a new mechanism causing single event upsets (SEUs). With irradiation from the front side through back end of line (BEOL), a monoenergetic beam becomes broadened in energy and space so that a range of proton energies and angles are incident on the CMOS chip . Techniques such as thinning Silicon (Si) to the buried oxide with mechanical polishing and Xenon di-fluoride (XeF2) etching allows irradiation of the chip from the back side eliminating beam straggling problems. Another source of beam energy broadening is by using a high energy beam and lowering the beam's energy by passing it through a "degrader" typically made of Lucite or lead. However, the beam broadens again in energy after the degrader and the beam striking the chip is no longer monoenergetic .

Disclosed is a method and system of beam delivery where very low energy, monoenergetic, protons are generated for direct ionization irradiation near the Bragg peak (60 kilo electron volts (keV)). The method and system is also useful for delivering low energy protons with very low energy spread for applications such as, but not limited to, medium-energy ion scattering spectroscopy (MEIS), and ion beam lithography where low energy, stable, proton beams allow high aspect ratio patterning (lithography) to be performed...