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Fin Loop Structure for Strain Evaluation

IP.com Disclosure Number: IPCOM000241724D
Publication Date: 2015-May-26
Document File: 3 page(s) / 80K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method to prevent strain relaxation during Nanobeam diffraction (NBD) sample preparation. The novel solution comprises two ways to of ensuring full fin loops are included in NBD macros, which then improves the accuracy of fin strain measurement.

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Fin Loop Structure for Strain Evaluation


Strained channel materials such as tensile-strained silicon for negative Field Effect Transistors (nFET) and compressively strained Silicon Germanium (SiGe) for positive Field Effect Transistors (pFET) have become viable Complementary Metal-Oxide Semiconductor (CMOS) options for 10nm fin Field Effect Transistors (finFET) and beyond. The pristine strain value inside the strained Si/SiGe fins is technologically critical, as device performances are directly dependent upon the strain in fins.

Nanobeam diffraction (NBD) is a powerful tool for assessing strain distribution in fins. However, NBD samples made by a focused ion beam (FIB) sometimes suffer from the unintentional cut of fins during sample preparation. Fin cut causes elastic relaxation of the fin, obscuring the NBD strain measurement.

A method is needed to improve macro design so that strain in fins can be accurately measured without the undesired fin cut during NBD sample preparation.

Figure 1: Problem: A method is needed to prevent strain relaxation during NBD sample preparation

The novel solution comprises two ways to of ensuring full fin loops are included in NBD macros, which then improves the accuracy of fin strain measurement.

Solution Embodiment 1

1. Form dense Fins on substrate in NBD macros, same as device macros by sidewall imaging transfer. Fin loops are formed.

Figure 2: Solution Embodiment 1, Step 1

1


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2. Design NBD macros such that, by using...