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Substrate Orientation Selection for III-V and Group IV Co-Integrated Devices

IP.com Disclosure Number: IPCOM000241758D
Publication Date: 2015-May-28
Document File: 3 page(s) / 144K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method to select the substrate orientation to accommodate both the growth mode and the electronic transport preferences during electronic transport in a crystalline semiconductor.

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Substrate Orientation Selection for III - -V and Group IV Co

V and Group IV Co -

-Integrated Devices

Integrated Devices

Electronic transport in a crystalline semiconductor is dependent on the crystallographic direction. In group IV semiconductors (e.g., Silicon Germanium (SiGe), Ge) the preferred transport direction is

; therefore, it is desirable to develop devices that take advantage of this preferable transport direction .

On the other hand, to produce co-integrated III-V and IV devices, the morphology of the crystal growth and heteroepitaxial of the different materials is strongly dependent on the growth direction, because of the physical properties of the various crystal surfaces , especially for III-V materials where {111} and similar surface are polar.

When growing crystals, there is always selective growth (more or less) for which one growth direction grows faster than another does. For example, most often the

growth direction is much faster than the

. This controls the shape and faceting of the crystals that grow.

When selective epitaxy is desired, this effect is even more pronounced because there are many surfaces and edges close to the growth front . With traditional {100} and even the less common {110} type substrates, it may not be trivial to both selectively grow III-V and IV materials on the Si substrate and align the devices to take advantage of the preferable transport direction.

The novel solution is a method to select the substrate orientation to accommodate both the growth mode and the electronic transport preferences .

Embodiment #1: Mandrel Growth


The goal is to grow a material selectively on the sidewall of a mandrel . In Figure 1, the blue material is a crystalline material that can act as a seed for growth . The white material is a selective material that does not promote growth of the new material .

Figure 1: Mandrel growth

1


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