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Novel Structure and Method for Interconnect Metal Line Stitching at Top

IP.com Disclosure Number: IPCOM000242124D
Publication Date: 2015-Jun-19
Document File: 4 page(s) / 47K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed are a structure and method to make thin wire and wide wire with same local uniformity using a novel Chemical-Mechanical Planarization (CMP) scheme and line top stitching.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

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Novel Structure and Method for Interconnect Metal Line Stitching at Top

As technology nodes continue to scale down, the local non-uniformity between thin wire and wide wire becomes difficult to control due to the Chemical-Mechanical Planarization (CMP) dishing and erosion. A method is needed to make thin wire and wide wire with same local uniformity.

The proposed solution is a structure and method to make thin wire and wide wire with same local uniformity using a novel CMP scheme and line top stitching.

Figure 1: Motivation: Current process for line stitching forms a sharp corner and cannot meet the design requirement

Figure 2: Motivation: Local uniformity is difficult to meet for both thin wire and wide wire at the same time due to the CMP dishing and erosion

The following figures illustrate the steps for implementing the solution in a preferred embodiment.

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Figure 3: Step 1: Start with N block and ultra-low K (ULK)

Figure 4: Step 2: Reactive Ion Etching (RIE) to form thin wire and wide wire trench

Figure 5: Step 3: Deposit metal liner

Figure 6: Step 4: Partial plate or deposit metal

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Figure 7: Step 5: Deposit a sacrificial insulator layer such as Nblock on top of metal

Figure 8: Step 6: Step 6: Nblock CMP to stop on metal

Figure 9: Step 7: Metal CMP to form the novel wide wire structure with metal line stitching at the top

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