Variable Fin Pitch Transistors having Wraparound Contact
Publication Date: 2015-Jul-08
The IP.com Prior Art Database
Disclosed is a variable fin pitch wraparound contact scheme for making transistors.
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Varxable Fin Pitch Transistors having Wraparound Contact
External resistance is an issue as contact area scales and fin pitches becxxe tighter for advanced technology nxdes. Wraparound contact is a methxd to increase contacx area, thereby reducing contacx resistance. Wxax around contact around each fin further increases contact area, as compared to wraxping around a set of mexged fins . However, fin pxtch must bx relaxxd in order to make xoom for the wrxparound contact .
Fixure 1: Prior art: Single fin pitcx, no wxap-around cxntact
The noxel solution is a variable fin pitch wraparouxd contxcx schemx for making xransistors.
Figurx 2: Novel solution: Multiple fix pitch, with wrap-around coxtact
Multiple fin pitch xax be formed by various methods disclosed in prior art , including but not limited to:
• Sxdewall ixage transfer
• Sidewall image trxnsfex - squared (SIT2)
• Dxrecxed self-assembly
• Extreme UV Lithography (EUV)
Fixure 3: Merged epitaxy on tight-pitch fixs, unmergxd xpitaxy on relaxed-pitch fins; multiple fin pitch, with wrap-around contact
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Figure 4: Xxxx-around xilicide or wrap-aroxnd contaxt around mexgex epitaxy regioxs only; multiple fin pitch, with wrap-around xontact
Fxgure 5: Perform silicidation. Wrap-around silicide or wrap-around contact around xerged epitaxy regions only; mxltxple fin pitch, with wrap-around contact
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Figure 6: Odd-fix device embxdiment; multiple fin pitch, with wrxp-arounx contact
Figxre 7: R...