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Low Leakage cell architecture for fixed Poly-pitch technologies

IP.com Disclosure Number: IPCOM000242577D
Publication Date: 2015-Jul-28
Document File: 4 page(s) / 175K

Publishing Venue

The IP.com Prior Art Database

Abstract

This paper describes a new architecture of low leakage extended gate length standard cells for fixed poly-pitch and/or fixed poly-spacing technologies. Low leakage extended gate length standard cells are fully compatible with nominal gate length cells.

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Low Leakage cell architecture for fixed Poly-pitch technologies

Abstract

This paper describes a new architecture of low leakage extended gate length standard cells for fixed poly-pitch and/or fixed poly-spacing technologies. Low leakage extended gate length standard cells are fully compatible with nominal gate length cells.

Introduction

Currently, most standard cell libraries include so called Low Leakage cells (LOLK) – the cells with all extended channel lengths which are used for low leakage applications. Typically, having ~5-15% increased area, the LOLK cells are widely used in designs because these cells provide significant leakage decrease (up to ~70-90%) in comparison with nominal channel lengths cells.

For technologies, which have fixed poly-pitch value, the gate lengths and poly-spacing in standard cells can have only strongly predefined values. One of the main problems is that additional extension of gate length will result in vertical abutment issues: upper and lower rows, which can have the cells with nominal gate length, will have DRC violations on poly gates with the cells which have extended gate length.

Architecture of low leakage extended gate length standard cells for fixed poly-pitch

New architecture of extended gate length standard cells for fixed poly-pitch and fixed
poly-spacing, which is fully compatible with nominal gate length cells, includes:

- Full-height abutment dummy poly on the left and right sides of an extended gate length cell to provide left/right compatibility and horizontal abutment with nominal gate length cells;

- Short-cut adjusting internal dummy poly on the left and right sides of an extended gate length cell to adjust transition from one poly-pitch to another poly-pitch;

- Short-cut poly-gates to build extended gate length standard cells with vertical indents to upper/lower boundary, to provide correct vertical abutment with upper/lower rows.

General structure of the new described architecture is shown in Figure 1, where

- L1/S1 – nominal gate length / fixed spacing between poly-silicon;

- Pitch1 – poly-pitch for the cells with nominal gate length, equal to (L1+S1);

- L2 – extended gate length (L2 > L1...