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Method for Providing Recess-Free Chemical-Mechanical Planarization (CMP) to Allow Confined Indium Gallium Arsenide (InGaAs) Channel Growth

IP.com Disclosure Number: IPCOM000243035D
Publication Date: 2015-Sep-09
Document File: 5 page(s) / 107K

Publishing Venue

The IP.com Prior Art Database

Abstract

A method is disclosed for providing recess-free chemical-mechanical planarization (CMP) to allow confined Indium Gallium Arsenide (InGaAs) channel growth.

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Method for Providing Recess - -Free Chemical

Free Chemical - -Mechanical Planarization

Mechanical Planarization (((CMP CMP CMP) )) to Allow

to Allow

Confined Indium Gallium Arsenide ( ((InGaAs

InGaAs) )

Channel Growth

Channel Growth

Recessing of III-V (compounds, binary) grown in trenches, such as for example, Indium Phosphide (InP) is an uncontrollable challenging process. As a result, III-V channel such as Indium Gallium Arsenide (InGaAs) or Indium Arsenide (InAs) that is grown in trenches results in faceted growth. There needs a method and system that provides a recess free process for growing InGaAs.

Disclosed is a method and system for providing a recess-free chemical-mechanical planarization (CMP) to allow confined InGaAs channel growth. The method and system enables thermal expansion of oxidized poly Silicon (Si) at sufficiently low thermal budget (plasma oxidation) by selectively growing Shallow Trench Isolation (STI) oxide, allowing room for confined InGaAs channel growth.

In accordance with the method and system, as shown in figure 1, deep tranches on bulk Si substrate are initially applied using Nitride HM.

Figure 1

As illustrated in figure 2, deep tranche bulk Si substrate is filled with STI oxide using CMP process.

1


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Figure 2

The STI oxide Si substrate is then etched using nitride hard mask so as to recess Si , as illustrated in figure 3.

Figure 3

The STI oxide Si substrate is then utilized to grow III-V (InP) under CMP process, as illustrated in figure 4.

2


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