Browse Prior Art Database

Improved Contact Structure for eDRAM Fins

IP.com Disclosure Number: IPCOM000243995D
Publication Date: 2015-Nov-04
Document File: 4 page(s) / 157K

Publishing Venue

The IP.com Prior Art Database

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 52% of the total text.

Page 01 of 4

Title

Improved Contact Structure for eDRAM Fins

Abstract

Disclosed is a method to engineer the P-dopant profile by changing the solubility of the dopant host material. The novel method distributes the Germanium (Ge) in the Silicon Germanium (SiGe) host materials to engineer the P-dopant concentration profile and optimize the concentration profile for implementation in embedded Dynamic Random Access Memory (eDRAM) devices.

Problem

The nEPI in the logic cell and embedded Dynamic Random Access Memory (eDRAM) cannot be shared. The two devices require different dopant concentration profiles. Currently, the eDRAM suffers from gate-induced drain leakage (GIDL) with the current 14 best-known methods (BKM) (logic) epitaxy. For the eDRAM devices, a method is needed to gradually distribute the dopants with a low concentration, starting at the fin, to a higher concentration. A low doping concentration at the fin minimizes GIDL related device performance issues. A high doping concentration at the source drain (S/D) epitaxial surface minimizes the contact resistance.

Figure 1: eDRAM structure before ("third") epitaxy


Page 02 of 4

Figure 2: View of Cross section

Solution/Novel Contribution

The novel contribution is a method to engineer the P-dopant profile by changing the solubility of the dopant host material. The solubility of Phosphorus (P) is dependent on the concentration of Germanium (Ge) in a Silicon Germanium (SiGe) host material. The novel method distributes the Ge in the SiGe host materials to engineer the P-dopant concentration profile and...