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Separate and Independent Contact Modules Process Flow for Si Photonics

IP.com Disclosure Number: IPCOM000244004D
Publication Date: 2015-Nov-04
Document File: 6 page(s) / 282K

Publishing Venue

The IP.com Prior Art Database

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Title

Separate and Independent Contact Modules Process Flow for Si Photonics

Abstract

Disclosed is a method to use independent contacts modules for the complementary metal-oxide semiconductor (CMOS)/modulator devices and the Germanium (Ge) photodetector devices. Independent contacts modules allow separate contacts etch and contacts metal liner for the Ge photodetector, which enables independent control and optimization of the performance and yield.

Problem

Monolithic integration of complementary metal-oxide semiconductor (CMOS) and photonics devices requires process modifications to optimize the performance and yield of both CMOS and photonics devices. The contacts module is shared by CMOS and photonics devices, which works well for modulators because the contacts etch stops on silicide are the same as those for CMOS devices. However, because the Germanium (Ge) photodetector does not get silicide, there is a risk of over-etching into the Ge layer leading to high Ge photodetector leakage and poor yield. In addition, contact resistance between contacts metal liner and silicide is optimal for CMOS and modulator devices. However, the Schottky barrier between the standard CMOS contacts metal liner and the Ge photodetector might not be optimal for metal-semiconductor-metal (MSM) photodetector performance and yield.

Solution/Novel Contribution

The novel solution uses independent contacts modules for the CMOS/modulator devices and the Ge photodetector devices. Independe...