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Stacked nanowires formed by aspect ratio trapping with precisely controlled nanowire and spacing dimensions

IP.com Disclosure Number: IPCOM000245113D
Publication Date: 2016-Feb-09
Document File: 4 page(s) / 151K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for forming stacked nanowires without the need of epitaxially growing the superlattice structure. The stacked nanowires are formed by removing oxide selective to nitride after aspect ratio trapping (ART), followed by etching the exposed semiconductor fin sidewalls.

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Title

Stacked nanowires formed by aspect ratio trapping with precisely controlled nanowire and spacing dimensions

Abstract

Disclosed is a method for forming stacked nanowires without the need of epitaxially growing the superlattice structure. The stacked nanowires are formed by removing oxide selective to nitride after aspect ratio trapping (ART), followed by etching the exposed semiconductor fin sidewalls.

Problem

Nanowire (NW) is touted as a viable device option for continued Complimentary Metal- Oxide Semiconductor (CMOS) scaling due to its superior electrostatics. Stacked nanowires are needed to render a nanowire device area efficient. The conventional formation for stacked nanowires requires growing alternating semiconductor layers (i.e. superlattice structure), one for channel, and the other as the sacrificial layer to release nanowire channels. For example, using Silicon Germanium (SiGe) as the sacrificial layer to form stacked Si nanowires is well known in the art. However, the material choice may be limited for certain nanowire channels. For example, in order to form stacked SiGe nanowires with 50% Ge%, one has to use at least 75% Ge% SiGe as the sacrificial layer to maintain a reasonable etch selective between 50% and 75% SiGe. Growing those materials together is not trivial. Therefore, there is a need for improvement in forming stacked nanowires.

Solution/Novel Contribution

The novel contribution is a method for forming stacked nanowires without the n...