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Structure and Method of Making Multi Short and Long Channel Transistors Integrated Together at High Density for Analog Integrated Circuit Applications

IP.com Disclosure Number: IPCOM000245401D
Publication Date: 2016-Mar-07
Document File: 9 page(s) / 92K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed are a structure and method of making multi short and long channel transistors integrated together at high density for analog integrated circuit (IC) applications.

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Structure and Method of Making Multi Short and Long Channel Transistors Integrated Together at High Density for Analog Integrated Circuit Applications

Modern integrated circuits (IC) design, frequently use short channel transistors for high-speed performance boost and long channel transistors for system reliability and precise control. This is especially true for the analog circuits design. However, as technology nodes continue to shrink beyond the 7nm node, it is extremely difficult to integrate both short channel transistors and long channel transistors at the same layer, due to the long channel dish issues from Chemical Mechanical Planarization (CMP) and Reactive Ion Etching (RIE).

One approach to solve this issue is to introduce protection masks for the long channel devices while processing short channel transistors. This not only increases the manufacture cost, but also introduces extra defects and reliability concerns due to the damage that may be introduced during the protection mask strip. However, to prevent the interference among the transistors, analog designs require the maintaining of some distance among these transistors, and this greatly decreases the analog IC shrink speed compared to digital IC.

The novel contribution is a multi-layer short channel and long channel transistors integration structure. The novel short channel and long channel transistors stack structure at high density without using protection hard mask. Long channels are well protected by the top oxide layer without dish concerns. The novel method includes smart in-situ self-Vt correction and adjustment with l...