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Means of wafer bow modulation via ion implantation

IP.com Disclosure Number: IPCOM000245556D
Publication Date: 2016-Mar-16
Document File: 3 page(s) / 56K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method to use an ion implant targeted at a film interface to relax the stress-inducing wafer bow during semiconductor processing.

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Title

Means of wafer bow modulation via ion implantation

Abstract

Disclosed is a method to use an ion implant targeted at a film interface to relax the stress-inducing wafer bow during semiconductor processing.

Problem

Various semiconductor processes, including film deposition and removal, can create wafer level stress resulting in wafer bow across the wafer. Previous work to address wafer bow has included engineering back side films involving the addition or removal of films on the back side of the wafer. This technique is limited by the availability of tools and processes to selectively remove various films from the wafer back side and/or process complexity introduced to facilitate selective removal. The manipulation of back side films can also impact downstream processes, which are sensitive to back side properties including conductivity or reflectivity.

Solution/Novel Contribution

The novel solution is a method to use an ion implant targeted at a film interface to relax the stress-inducing wafer bow. This approach is demonstrated here to work on Silicon on Insulator (SOI) substrates via relaxation of Buried Oxide (BOX)-handle wafer stress, but is also applicable to stressed films deposited on the back sides of wafers. This process is simpler than outright film removal, with no dependency on the etch selectivities of the back side films involved. This also leaves the films in place, without impact to downstream processes.

Method/Process

Simple Conceptual Case...