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Super Low Temperature Gate Oxide: High Voltage Input/Output Gate Oxide for replacement metal gate (RMG) fin field effect transistor (FINFET) Devices

IP.com Disclosure Number: IPCOM000245594D
Publication Date: 2016-Mar-21
Document File: 1 page(s) / 14K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method to use low temperature (around 400o C or less) conformal atomic layer deposition (ALD) Silicon Oxide (SiO2) deposition and low pressure plasma oxidation at a same or higher temperature (about 400o C through about 450o C) as a means to retain dopant in FINS, consume very little silicon (Si) or Silicon Germanium (SiGe) from the fin, and enable easy removal from high performance device areas.

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Title

Super Low Temperature Gate Oxide: High Voltage Input/Output Gate Oxide for replacement metal gate (RMG) fin field effect transistor (FINFET) Devices

Abstract

Disclosed is a method to use low temperature (around 400o C or less) conformal atomic layer deposition (ALD) Silicon Oxide (SiO2) deposition and low pressure plasma oxidation at a same or higher temperature (about 400o C through about 450o C) as a means to retain dopant in FINS, consume very little silicon (Si) or Silicon Germanium (SiGe) from the fin, and enable easy removal from high performance device areas.

Problem

It is desirable to create nitrogen free oxide at an ultra-low thermal budget (400o C) with equivalent thermal oxide quality that is conformal for FINFETs (e.g., 400o C atomic layer deposition (ALD) Silicon Oxide (SiO2) with 400o C plasma oxidation). At a fixed Vbd (5 V at 1.65 Vmax), non-nitride low temperature oxide shows 2-3% ring oscillator (RO) improvements. This indicates improved removal of input/output (I/O) oxide from high performance oxide as well. The lowest thermal budget I/O oxide with high-K/metal-gate at 14 nm FINFET ground-rules on full microprocessor design demonstration is needed.

One existing solution is Chemical Vapor Deposition (CVD) oxide (750o C) followed up with room temperature plasma oxidation. A second solution, is high temperature oxidation (HTO) CVD with room temperature plasma oxidation for some technologies. These high temperature solutions may cause dopant...