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Browse Prior Art Database

Long Channel Vertical FETs

IP.com Disclosure Number: IPCOM000245616D
Publication Date: 2016-Mar-22
Document File: 2 page(s) / 50K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method of forming a long channel FET with shorter vertical FETs

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

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Long Channel Vertical FETs


Long channel (LG) analog devices are needed for any technology node. For vertical Field Effect Transistors (FETs), it is difficult to fabricate a single, long channel (e.g., a couple of hundred nanometers) device together with short-channel devices.

The proposed solution is a method to form long channel devices Figure 1: Summary of solution

The steps for implementing this solution in a preferred embodiment are outlined in the figures below.

Figure 2: Form fins on highly doped bottom S/D.

Figure 3: Form STI and bottom spacer

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Figure 4: Grow top S/D epi

Figure 5: Form contacts

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