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Lower dimensional semiconductors for high temperature downhole use

IP.com Disclosure Number: IPCOM000246472D
Publication Date: 2016-Jun-09
Document File: 1 page(s) / 13K

Publishing Venue

The IP.com Prior Art Database

Abstract

Recently, there have been reports in the literature about fabricating lower dimensional 2d and 1d semiconductors for electronics such as diodes and transistors and for photodetectors. Because reduced dimensionality also reduces the number of carrier (electron) states available for promotion from the valence to the conduction band, these lower dimensional semiconductors should perform better at high temperatures such as the high temperatures encountered downhole.

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Title:  Lower dimensional semiconductors for high temperature downhole use

Abstract:  Recently, there have been reports in the literature about fabricating lower dimensional 2d and 1d semiconductors for electronics such as diodes and transistors and for photodetectors.  Because reduced dimensionality also reduces the number of carrier (electron) states available for promotion from the valence to the conduction band, these lower dimensional semiconductors should perform better at high temperatures such as the high temperatures encountered downhole.

Description:  Recently, there have been reports in the literature about fabricating lower dimensional 2d and 1d semiconductors for electronics such as diodes and transistors and photodetectors.  Because reduced dimensionality also reduces the number of carrier (electron) states available for promotion from the valence to the conduction band, these lower dimensional semiconductors will perform better at high temperatures such as the high temperatures encountered downhole.  Lower dimensionality allows higher temperature operation of electronics even when made from the same materials.