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Cobalt- or Manganese-Containing Compounds, Their Synthesis, and Use in Metal-Containing Film Deposition

IP.com Disclosure Number: IPCOM000246555D
Publication Date: 2016-Jun-16

Publishing Venue

The IP.com Prior Art Database

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COBALT- OR MANGANESE-CONTAINING COMPOUNDS, THEIR SYNTHESIS, AND USE IN METAL-CONTAINING FILM DEPOSITION

Example 1: Synthesis of Co(2-methyl allyl)(diisopropylamidinate)

To a schlenk flask with CoCl2, THF is added slowly at 0 oC under nitrogen. 2-Methylallylmagnesium chloride is added to the mixture at 0 oC and stirred overnight warming up to room temperature.

To another schlenk flask with N, N’-diisopropylcarbodiimide and THF, methyllithium is added at 0 oC and the mixture is stirred 2 hours at room temperature. This Li-N,N’-diisopropylacetamidinate solution is added to the other flask at -78 oC and mixture stirred overnight.

Solvent is removed under reduced pressure and toluene is added. The solution is filtered over Celite and toluene is removed under reduced pressure to afford a dark solid. The solid is purified by sublimation, distillation or recrystallization.

Example 2: Synthesis of Mn(2-methyl ally)(diisopropylamidinate)

To a schlenk flask with MnCl2*, THF is added slowly at 0 oC under nitrogen. 2-Methylallylmagnesium chloride is added to the mixture at 0 oC and stirred overnight warming up to room temperature.

To another schlenk flask with N, N’-diisopropylcarbodiimide and THF, methyllithium is added at 0 oC and the mixture is stirred 2 hours at room temperature. This Li-N,N’-diisopropylacetamidinate solution is added to the other flask at -78 oC and mixture stirred overnight.

Solvent is removed under reduced pressure and toluene is added. The solution is filtered over Celite and toluene is removed under reduced pressure to afford a dark solid. The solid is purified by sublimation, distillation or recrystallization.

*MnI2 is also possible to use instead of MnCl2.

Example 3: Vapor Deposition Using the Compounds of Examples 1 and 2 and Their Analogs

Applicants believe that ALD methods may be used with any of the disclosed compounds to deposit Co or Mn films using H2 or NH3 as a reducing reagent; CoO or MnO films using O2, O3 or H2O as a oxidizing reagent; or CoN or MnN films using H2 and/or NH3 as a reducing reagent.  Exemplary compounds include Co(η3-allyl)(N,N’-diisopropylacetamidinate), Co(η3-allyl)(N,N’-di-t-buthylacetamidinate), Co(η3-1-methylallyl)(N,N’-diisopropylacetamidinate), Co(η3-1-methylallyl)(N,N’-di-t-buthylacetamidinate), Co(η3-2-methylallyl)(N,N’-diisopropylacetamidinate), Co(η3-2-methylallyl)(N,N’-di-t-buthylacetamidinate), Mn(η3-allyl)(N,N’-diisopropylacetamidinate), Mn(η3-allyl)(N,N’-di-t-buthylacetamidinate), Mn(η3-1-methylallyl)(N,N’-diisopropylacetamidinate), Mn(η3-1-methylallyl)(N,N’-di-t-buthylacetamidinate), Mn(η3-2-methylallyl)(N,N’-diisopropylacetamidinate), and Mn(η3-2-methylallyl)(N,N’-di-t-buthylacetamidinate).

Technical field

Cobalt-containing compounds and manganese-containing compounds, their synthesis, and their use for the deposition of cobalt-containing films and manganese-containing films are disclosed.

Background

Chemical Vapor Deposition (CVD) and Atomi...